AlN
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Related Articles from SNS
AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
arXiv:2606.02954v1 Announce Type: new Abstract: We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap ( UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction of the epitaxial AlN gate interlayer enables significant improvement in breakdown strength, with average breakdown field exceeding 6.94 MV/cm, which represents state-of-the-art for lateral field effect transistors, while maintaining excellent on-state current density...
An ultra-wide-bandgap semiconductor photodetector for linear measurement of bright sub-bandgap light
arXiv:2606.07807v1 Announce Type: new Abstract: Semiconductor photodetectors are conventionally optimized for sensing weak optical signals, and they typically saturate at low-to-moderate light intensity. Here, we demonstrate sub-bandgap AlN photodetectors that exhibit non-saturating linear response to ultra-bright blue light exceeding 40 $\mathrm{W/cm^2}$. The photodetector further shows undistorted linear response at elevated temperature, up to at least 300 $\mathrm{^\circ C}$. This...
Petri Net Modeling and Deadlock-Free Scheduling of Attachable Heterogeneous AGV Systems
arXiv:2508.00724v2 Announce Type: replace Abstract: The increasing demand for flexible automation has accelerated the adoption of heterogeneous automated guided vehicles (AGVs). This work investigates a new scheduling problem in a material transportation system consisting of attachable heterogeneous AGVs, including carriers and shuttles, that flexibly attach and detach for cooperative task execution. While such collaboration enhances operational efficiency, the attachment-induced...