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Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector $k_0$ in nuclear spin-free Si quantum wells
new Abstract: Periodic Ge modulations within strained Si quantum wells in SiGe heterostructures offer a route to deterministically enhance conduction-band valley splitting in Si, a key requirement for scalable spin-qubit quantum computing. Efficient enhancement requires modulations in the order of the Si valley wavevector $k_0$ (9.7 nm$^{-1}$), corresponding to a period of 0.64 nm and near-monolayer growth control. Using nuclear-spin-free molecular beam epitaxy with $^{28}$Si and $^{72}$Ge,...
GE Sees Potential For More China Deals After Trump-Xi Meeting
GE Aerospace remains optimistic that it can secure more aircraft-engine orders from China after President Donald Trump and his Chinese counterpart Xi Jinping met in Beijing last month and manufacturing partner Boeing Co. came home an initial batch of commitments.
D - Two-GE-0527 Fund I, a series of Platform Funds 2026, LP (0002138923) (Filer)
Filed: 2026-06-05 AccNo: 0002138923-26-000001 Size: 7 KB Item 3C: Investment Company Act Section 3(c) Item 3C.1: Section 3(c)(1)
Token-sliding realizability for complements, Cartesian-products, and grid graph families
Announce Type: cross Abstract: For an integer $k\ge 0$ and a graph $G$, the \emph{token-sliding reconfiguration graph $\mathsf{TS}_k(G)$} has the independent $k$-sets of $G$ as vertices. Two vertices are adjacent if one token can slide along an edge of $G$ and the resulting $k$-set is still independent. We study the following realizability problem: for fixed $k\ge 2$, which graphs are isomorphic to $\mathsf{TS}_k(G)$ for some graph $G$?
Filamentary Transport and Thermoelectric Effects in Mushroom Phase Change Memory Cells
arXiv:2606.10262v1 Announce Type: new Abstract: We performed a 2D finite-element electrothermal computational study of thermoelectric effects and filamentary electronic transport in Ge$_2$Sb$_2$Te$_5$ mushroom phase change memory cells during Reset and Set operations, accounting for spatial activation energy variations in amorphous Ge$_2$Sb$_2$Te$_5$ and phase-change dynamics. Reset operations with current going from the top electrode to the narrow 4 nm bottom electrode require $\sim$3x less...
Strategyproof Mechanisms for Euclidean Facility Location Problems under $L_p$-norm Social Cost
arXiv:2606.08621v1 Announce Type: new Abstract: We study strategyproof mechanisms for eliciting agents' location preferences truthfully in the Euclidean plane $\mathbb R^2$ and locating a facility so as to minimize the $L_p$-norm social cost, defined as the $L_p$-norm of the vector of distances from the facility to the agents' preferred locations, for any $p \ge 1$. While the cases $p=1$ and $p=\infty$ have been well-studied, open questions remain about the optimal approximation ratios...
Electrolyte Bonding Engineering for Highly Uniform GeTe-based CBRAM and Parallel Hebbian Learning in Selector-free Hopfield Networks
arXiv:2606.05768v1 Announce Type: new Abstract: Hopfield networks offer a hardware-friendly framework for energy-efficient associative memory, yet their practical realization in memristor crossbar arrays is critically hindered by device-to-device (D2D) variability, which prevents reliable parallel programming. Here, we address this bottleneck through systematic composition engineering of the Ge-Te solid electrolyte in conductive bridge random access memory (CBRAM) devices.
Bounds for Single-Error-Correcting Analog Codes
arXiv:2606.03011v1 Announce Type: new Abstract: We study single-error correction for analog codes over $\mathbb{R}$. A key performance measure is the parameter $\Gamma_2(\mathcal{C})$, which quantifies the minimum separation required between large outlying errors that need to be located/corrected and bounded tolerable perturbations. We prove that every real linear $[n,n-2]$ code $\mathcal{C}$ satisfies \[ \Gamma_2(\mathcal{C})\ge \frac{1}{\sin^2(\pi/2n)}. This resolves Roth's open problem on...