Ge-Te
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Related Articles from SNS
Electrolyte Bonding Engineering for Highly Uniform GeTe-based CBRAM and Parallel Hebbian Learning in Selector-free Hopfield Networks
arXiv:2606.05768v1 Announce Type: new Abstract: Hopfield networks offer a hardware-friendly framework for energy-efficient associative memory, yet their practical realization in memristor crossbar arrays is critically hindered by device-to-device (D2D) variability, which prevents reliable parallel programming. Here, we address this bottleneck through systematic composition engineering of the Ge-Te solid electrolyte in conductive bridge random access memory (CBRAM) devices.