PFOM
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Related Articles from SNS
AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
arXiv:2606.02954v1 Announce Type: new Abstract: We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap ( UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction of the epitaxial AlN gate interlayer enables significant improvement in breakdown strength, with average breakdown field exceeding 6.94 MV/cm, which represents state-of-the-art for lateral field effect transistors, while maintaining excellent on-state current density...