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Related Articles from SNS
HVPE Growth of Si-Doped $\beta$-Ga$_2$O$_3$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties
arXiv:2606.05607v1 Announce Type: new Abstract: Si-doped $\beta$-Ga$_2$O$_3$ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline quality, and electrical transport properties was systematically investigated. Growth kinetics studies revealed a strong dependence of deposition rate on HCl flow, growth pressure, and source-to-substrate distance, with growth rates reaching up to 30 $\mu$m/hr.