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Accelerating NBTI Aging Evaluation via Physics-Aware Graph Attention Networks
Announce Type: new Abstract: As semiconductor technology advances to smaller nodes, Negative Bias Temperature Instability (NBTI) under prolonged workloads has emerged as a significant bottleneck constraining reliability-aware Design-Technology Co-Optimization (DTCO). Conventional TCAD simulations incur prohibitive computational overhead when evaluating device aging characteristics, making it difficult to satisfy the demand for efficient iterative design cycles. To address this challenge,...
PALTO: Physics-Informed Active Learning for Tri-Gate FinFET Design Optimization for Vertical Power Delivery
Announce Type: new Abstract: This paper demonstrates the effectiveness of machine learning-driven optimization for designing application-specific GaN tri-gate FinFETs in vertical power delivery systems. Conventional TCAD-based approaches are computationally intensive and insufficient for navigating the high-dimensional, nonlinear design space of advanced GaN devices. To address this, a physics-informed active learning framework is used to intelligently guide simulations, accelerating...
Fast-Neutron Irradiation Effect in Heteroepitaxial $\beta$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates
Announce Type: new Abstract: In this work, we investigate the response of Ni/$\beta$-Ga$_2$O$_3$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15}$ n$\cdot$cm$^{-2}$. The LPCVD-grown heteroepitaxial structure consists of an unintentionally doped buffer, an n$^{+}$ contact layer, and an n-type drift layer, with mesa isolation realized by plasma-free Ga-assisted LPCVD etching. Prior to irradiation, the devices exhibit a...