UWBG
No mentions found
This entity hasn't been tracked yet, or Iris is still building its knowledge base.
Related Articles from SNS
AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
arXiv:2606.02954v1 Announce Type: new Abstract: We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap ( UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction of the epitaxial AlN gate interlayer enables significant improvement in breakdown strength, with average breakdown field exceeding 6.94 MV/cm, which represents state-of-the-art for lateral field effect transistors, while maintaining excellent on-state current density...
An ultra-wide-bandgap semiconductor photodetector for linear measurement of bright sub-bandgap light
arXiv:2606.07807v1 Announce Type: new Abstract: Semiconductor photodetectors are conventionally optimized for sensing weak optical signals, and they typically saturate at low-to-moderate light intensity. Here, we demonstrate sub-bandgap AlN photodetectors that exhibit non-saturating linear response to ultra-bright blue light exceeding 40 $\mathrm{W/cm^2}$. The photodetector further shows undistorted linear response at elevated temperature, up to at least 300 $\mathrm{^\circ C}$. This...