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Hurricanes even the series: Grades, big questions ...
Asking why the Carolina Hurricanes or Vegas Golden Knights feel the need to get a lead at any point before the final 10 seconds of the third period might be one of the greatest philosophical questions of our lifetime The Hurricanes had a pair of two-goal leads before the Golden Knights came back to level the game in the third period. That's when the Hurricanes struck twice in the third period for a 5-3 win in Game 4 of the Stanley Cup Final against the Golden Knights on Tuesday to tie the...
Staal nets wild winner as Hurricanes even series
LAS VEGAS -- Jordan Staal scored his second goal of the game while stretched out on his stomach at 6:32 of the third period to put the Carolina Hurricanes ahead for good in their 5-3 victory on Tuesday night over the Vegas Golden Knights, evening the Stanley Cup Final after four games. "Hectic like the series has been," Carolina goalie Brandon Bussi told ABC of Staal's goal. "He's a big-time player.
At the Origins of Electroculture: A Retrodictive Modelling of Bertholon's 18th-Century Electrovegetometer in the Pre-Corona Regime
arXiv:2606.10433v1 Announce Type: new Abstract: Pierre-Nicolas Bertholon's 18th-century electrovegetometer was conceived to harness "atmospheric electricity" for plant growth, yet its physical capabilities have never been quantified within the context of today's understanding of the Earth's atmospheric electric system. This study addresses the lack of quantitative assessment of such historical "electroculture" device and its plausible influence on the near-canopy electrical environment. It...
Fast-Neutron Irradiation Effect in Heteroepitaxial $\beta$-Ga$_2$O$_3$ Schottky Diodes Fabricated on Low-Cost Sapphire Substrates
Announce Type: new Abstract: In this work, we investigate the response of Ni/$\beta$-Ga$_2$O$_3$ Schottky barrier diodes fabricated on c-plane sapphire to fast-neutron irradiation up to a fluence of $1\times10^{15}$ n$\cdot$cm$^{-2}$. The LPCVD-grown heteroepitaxial structure consists of an unintentionally doped buffer, an n$^{+}$ contact layer, and an n-type drift layer, with mesa isolation realized by plasma-free Ga-assisted LPCVD etching. Prior to irradiation, the devices exhibit a...