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New nitride semiconductor expands material options for more powerful electronics

New nitride semiconductor expands material options for more powerful electronics
Phys.org Monday 07 September 2026, 19:00 UTC 1 min read
Key Points

Polar wurtzite nitride semiconductors, such as aluminum nitride (AlN) and gallium nitride (GaN), are central to modern high-power and high-frequency electronic devices because of their wide band gaps, high breakdown electric fields, and strong spontaneous and piezoelectric polarization.

Polar wurtzite nitride semiconductors, such as aluminum nitride (AlN) and gallium nitride (GaN), are central to modern high-power and high-frequency electronic devices because of their wide band gaps, high breakdown electric fields, and strong spontaneous and piezoelectric polarization.
Polar (ORG) GaN (ORG)
Originally published by Phys.org Read original →

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