BEOL
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DTCO of NOR-Type IGZO FeFETs for 3D Heterogeneous AI Memories: A Read-Centric Perspective
arXiv:2604.13624v2 Announce Type: replace Abstract: InGaZnO (IGZO)-channel FeFETs have attracted notable interest thanks to recent advances in endurance, opening up their application space for read-dominated AI memory tiers. This work evaluates the viability of NOR-type IGZO FeFETs for 3D heterogeneous AI memories from a read-centric design-technology co-optimization (DTCO) perspective, spanning on-chip back-end-of-line (BEOL) RAMs and hybrid-bonded memory chiplets, and off-chip,...
20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories
arXiv:2606.03677v1 Announce Type: new Abstract: Achieving low-voltage, nanosecond multi-level programming and non-destructive read-out of ferroelectric non-volatile memories (NVM) is critical for analog in-memory computing architectures relying on ferroelectric capacitive devices (FeCap). We integrate HfO2/ZrO2 ferroelectric nanolayers concurrently in the BEOL of CMOS and on SiO2/Si, achieving nanosecond multilevel switching with programming voltages below 5 V. Partial ferroelectric...