Epitaxy
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Related Articles from SNS
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
arXiv:2606.01727v1 Announce Type: new Abstract: Hexagonal boron nitride (hBN) has emerged as a leading host for optically active quantum defects. Yet introduction of specific impurity species other than carbon remains unexplored. Here, we demonstrate an in-situ silicon doping of hBN grown by high-temperature molecular beam epitaxy (HT-MBE).
AlN Gate Interlayer for UWBG AlGaN Transistors with Breakdown Field >6.9 MV/cm and PFOM >1.8 GW/cm2
arXiv:2606.02954v1 Announce Type: new Abstract: We report the demonstration of regrown epitaxial AlN gate interlayers with ultra-wide bandgap ( UWBG) AlGaN polarization-graded field effect transistors (PolFETs). The introduction of the epitaxial AlN gate interlayer enables significant improvement in breakdown strength, with average breakdown field exceeding 6.94 MV/cm, which represents state-of-the-art for lateral field effect transistors, while maintaining excellent on-state current density...
Van der Waals forces can play unexpected role in thin film properties
Van der Waals forces can play unexpected role in thin film properties Lisa Lock Scientific Editor Andrew Zinin Lead Editor Researchers have demonstrated the ability to use van der Waals forces to tune the physical and electronic properties of ferroelectric thin films. The work opens the door to new techniques for engineering materials for use in smaller, more energy efficient electronic devices. "Epitaxy is when you deposit a crystalline layer of material on top of another crystalline layer...
Sensor Quality Control and Annealing Studies of HGCAL Silicon Sensors
arXiv:2606.07278v1 Announce Type: new Abstract: We summarise Sensor Quality Control (SQC) results of non-irradiated silicon sensors for the CMS HGCAL detector, as well as the first detailed annealing campaign with a wafer-scale 120\,\textmu m (Epitaxial) sensor exposed to \(2\times10^{15}\)\,\si{n_{eq}/cm^2} at the Rhode Island Nuclear Science Center (RINSC). For the non-irradiated sensors, we present an overview of the QC workflow developed for HGCAL, including automated handling of vendor...
Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector $k_0$ in nuclear spin-free Si quantum wells
new Abstract: Periodic Ge modulations within strained Si quantum wells in SiGe heterostructures offer a route to deterministically enhance conduction-band valley splitting in Si, a key requirement for scalable spin-qubit quantum computing. Efficient enhancement requires modulations in the order of the Si valley wavevector $k_0$ (9.7 nm$^{-1}$), corresponding to a period of 0.64 nm and near-monolayer growth control. Using nuclear-spin-free molecular beam epitaxy with $^{28}$Si and $^{72}$Ge,...
HVPE Growth of Si-Doped $\beta$-Ga$_2$O$_3$ on Sapphire: Influence of Substrate Offcut on Structural and Electrical Properties
arXiv:2606.05607v1 Announce Type: new Abstract: Si-doped $\beta$-Ga$_2$O$_3$ films were heteroepitaxially grown on sapphire substrates using HVPE. The influence of sapphire offcut on growth kinetics, surface morphology, crystalline quality, and electrical transport properties was systematically investigated. Growth kinetics studies revealed a strong dependence of deposition rate on HCl flow, growth pressure, and source-to-substrate distance, with growth rates reaching up to 30 $\mu$m/hr.
Matching Terahertz and Hall Mobilities as a Hallmark of Intrinsic Charge Transport in Metal-Halide Perovskites
Announce Type: cross Abstract: Charge-carrier transport in soft-lattice materials, including metal-halide perovskites, is often perceived to be highly heterogeneous across different length scales, and influenced by both the intrinsic (dynamic) thermal electronic disorder and extrinsic (static) disorder due to crystal defects, impurities, grain boundaries, and surface states. As a consequence, the reported carrier mobilities obtained by different electrical and optical measurement techniques...