the EUV CE
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Related Articles from SNS
40% boost in extreme ultraviolet conversion efficiency via simultaneous dual-beam 2-{\mu}m laser irradiation
Announce Type: new Abstract: Scaling extreme ultraviolet (EUV) source power for next-generation lithography demands higher conversion efficiency (CE) at reduced per-pulse energies. We demonstrated a 40% CE enhancement by simultaneous dual-beam irradiation of a planar Sn target with a 2090-nm, 20-ns Ho:YAG laser. Single-beam irradiation at 40 mJ yielded an EUV CE of 2.6%; splitting the same total energy equally into two beams of 20 mJ each - at identical peak intensity - raised the EUV CE to...
Optimization of EUV output by experimentally validated radiation-hydrodynamic simulations across a broad laser parameter space
arXiv:2606.05948v1 Announce Type: new Abstract: Practical requirements such as improving wall-plug efficiency and reducing system footprint have become increasingly important with the introduction of extreme ultraviolet (EUV) lithography into high-volume semiconductor manufacturing. These demands motivate the development of solid-state mid-infrared lasers as alternatives to current CO2 lasers. Systematic exploration of laser-to-EUV conversion efficiency (EUV-CE) over a broad parameter space...