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40% boost in extreme ultraviolet conversion efficiency via simultaneous dual-beam 2-{\mu}m laser irradiation

arXiv Physics Tuesday 09 June 2026, 04:20 UTC By Naoki Nagahama, Kaito Nishimiya, Shunya Yamamoto, Hayato Yazawa, Yuta Takai, Chisato Tanaka, Kazuyuki Sakaue, Atsushi Sunahara, Gerry O'Sullivan, Shinichi Namba, Takeshi Higashiguchi, Eiji J. Takahashi 1 min read
Key Points

Announce Type: new Abstract: Scaling extreme ultraviolet (EUV) source power for next-generation lithography demands higher conversion efficiency (CE) at reduced per-pulse energies. We demonstrated a 40% CE enhancement by simultaneous dual-beam irradiation of a planar Sn target with a 2090-nm, 20-ns Ho:YAG laser. Single-beam irradiation at 40 mJ yielded an EUV CE of 2.6%; splitting the same total energy equally into two beams of 20 mJ each - at identical peak intensity - raised the EUV CE to...

arXiv:2606.08045v1 Announce Type: new Abstract: Scaling extreme ultraviolet (EUV) source power for next-generation lithography demands higher conversion efficiency (CE) at reduced per-pulse energies. We demonstrated a 40% CE enhancement by simultaneous dual-beam irradiation of a planar Sn target with a 2090-nm, 20-ns Ho:YAG laser. Single-beam irradiation at 40 mJ yielded an EUV CE of 2.6%; splitting the same total energy equally into two beams of 20 mJ each - at identical peak intensity - raised the EUV CE to 3.6%, which was the highest reported for 2-{\mu}m-driven laser-produced plasma sources. The EUV source size (60-70 {\mu}m) and energetic-ion spectra were nearly identical across both configurations, confirming comparable plasma conditions. Because the scheme requires only passive beam splitting and scales readily to three or more beams, it offers a practical route toward multi-kW-class, energy-efficient EUV sources for high-NA and hyper-NA lithography.
Sn (ORG) YAG (ORG) EUV CE (ORG) the EUV CE (ORG) EUV (ORG)
Originally published by arXiv Physics Read original →

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